| 1. |
- Eriksson, Jens, et al.
(author)
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The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC
- 2012
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 100:24, s. 241607-
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Journal article (peer-reviewed)abstract
- A pivotal issue for the fabrication of electronic devices on epitaxial graphene on SiC is controlling the number of layers and reducing localized thickness inhomogeneities. Of equal importance is to understand what governs the unintentional doping of the graphene from the substrate. The influence of substrate surface topography on these two issues was studied by work function measurements and local surface potential mapping. The carrier concentration and the uniformity of epitaxial graphene samples grown under identical conditions and on substrates of nominally identical orientation were both found to depend strongly on the terrace width of the SiC substrate after growth.
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| 2. |
- Kaushik, Priya Darshni, et al.
(author)
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Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application
- 2017
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In: Applied Surface Science. - : ELSEVIER SCIENCE BV. - 0169-4332 .- 1873-5584. ; 403, s. 707-716
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Journal article (peer-reviewed)abstract
- In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 x 10(13) ions/cm(2)). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and spintronic applications. (C) 2017 Elsevier B.V. All rights reserved.
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| 3. |
- Kaushik, Priya Darshni, et al.
(author)
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Surface functionalization of epitaxial graphene using ion implantation for sensing and optical applications
- 2020
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In: Carbon. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0008-6223 .- 1873-3891. ; 157, s. 169-184
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Journal article (peer-reviewed)abstract
- Surface functionalization has been shown to allow tailoring of graphene lattice thus making it suitable for different applications like sensing, supercapacitance devices, drug delivery system and memory devices. In this work, surface functionalization of epitaxial graphene on SiC (EG/SiC) was done by ion beam technology (30 keV Ag- ions at fluences ranging from 5 x 10(12) ions/cm(2) to 5 x 10(14) ions/cm(2)), which is one of the most precise techniques for introducing modifications in materials. Atomic force microscopy showed presence of nanostructures in ion implanted samples and Photoluminescence and X-ray photoelectron spectroscopy revealed that these are probably silicon oxy carbide. High-resolution transmission electron microscopy (HRTEM) showed decoupling of buffer layer from SiC substrate at many places in ion implanted samples. Further, HRTEM and Raman spectroscopy showed amorphization of both graphene and SiC at highest fluence. Fluence dependent increase in absorbance and resistance was observed. Gas sensors fabricated on pristine and ion implanted samples were able to respond to low concentration (50 ppb) of NO2 and NH3 gases. Detecting NH3 gas at low concentration further provides a simple platform for fabricating highly sensitive urea biosensor. We observed response inversion with increasing fluence along with presence of an optimal fluence, which maximized gas sensitivity of EG/SiC. (C) 2019 Elsevier Ltd. All rights reserved.
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| 4. |
- Kazemi, Amin, et al.
(author)
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The effect of Cl- and N-doped MoS2 and WS2 coated on epitaxial graphene in gas-sensing applications
- 2021
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In: SURFACES AND INTERFACES. - : ELSEVIER. - 2468-0230. ; 25
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Journal article (peer-reviewed)abstract
- In this study, epitaxial graphene (EG) was grown on a 6H-SiC (0001) substrate via the thermal decomposition of SiC. Undoped and Cl- or N-doped molybdenum disulfide (MoS2) and tungsten disulfide (WS2) ultrathin films were spin-coated on the graphene surface. The scanning electron microscopy (SEM) images and topological atomic force microscopy (AFM) analysis showed good distribution of thin MoS2 and WS2 flakes on the EG surface. The X-ray photoelectron spectroscopy (XPS) confirmed the presence of Mo-related peaks of 3d(5/2) and 3d(3/2) at similar to 232.2 eV and 235.1 eV, respectively. It also represented peaks of W 4f(7/2) and 5p(5/2) at around 36.1 eV and 37.9 eV, respectively. Moreover, XPS results showed peaks at around 167.4 eV and 168.4 eV corresponding to S 2p for MoS2 and WS2, respectively. The XPS results also confirmed the presence of dopant elements in MoS2 and WS2 flakes. We fabricated sensors using undoped and chlorine- or nitrogen-doped MoS2 and WS2 ultrathin films for gas-sensing applications. These sensors were surveyed for ammonia (NH3) and nitrogen dioxide (NO2) gas sensing. As in NO2, both undoped sensors react with a decrease in relative sensor responses to NH3, hence showing n-type behavior. Doping MoS2 and WS2 with chlorine led to a higher response vis-a-vis the nitrogendoped sensors. The absolute relative response of Cl-doped WS2 and MoS2 was about 3.5 and 1.8 times more than that of their undoped counterparts toward NH3. A change of direction with a slightly smaller response (approximately x 0.8), however, could also be observed in the doping of MoS2 and WS2 with nitrogen. When exposed to NO2, the Cl-doped WS2 sensor response was 1.2 more than the N-doped one, while for MoS2 these values changed in the range of 1.2 - 1.6 for different flows of gas.
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| 5. |
- Yakimova, Rositsa, et al.
(author)
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Progress in 3C-SiC growth and novel applications
- 2012
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In: Materials Science Forum Vol 711. - : Trans Tech Publications Inc.. ; , s. 3-10
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Conference paper (peer-reviewed)abstract
- Recent research efforts in growth of 3C-SiC are reviewed. Sublimation growth is addressed with an emphasis on the enhanced understanding of polytype stability in relation to growth conditions, such as supersaturation and Si/C ratio. It is shown that at low temperature/supersaturation spiral 6H-SiC growth is favored, which prepares the surface for 3C-SiC nucleation. Provided the supersaturation is high enough, 3C-SiC nucleates as two-dimensional islands on terraces of the homoepitaxial 6H-SiC. Effect of different substrate surface preparations is considered. Typical extended defects and their electrical activity is discussed. Finally, possible novel applications are outlined.
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